BA 1985
Development Engineer
Compound Semiconductor Device Physics
Yale Graduate School, M.S.E.E. 1988
Studied the growth and electronic properties of indium-based and antimonide-based quantum heterostructures and FETs. Growth of III-V semiconductors by molecular beam epitaxy. Characterization and processing of these materials and structures (with Professor H. Kroemer).
Studied the degradation of Vertical Cavity Surface Emitting Lasers by the method of Electron Beam Induced Current. Automated a JEOL 1200EXII Scanning-Transmission Electron Microscope for computer-controlled operation and collection of data (with Professor P. Petroff).
M.I.T. CENTER FOR ADVANCED ENGINEERING STUDY
January 1989 - June 1992
Department of Electrical Engineering and Computer Science
Engaged in research involving various aspects of Thin-Gate Dielectric, Reoxidized Nitrided Oxide MOS devices. Developed a charge-pumping test system for the characterization of interface traps in support of this effort (with Professor C. Sodini).